Current Issue

2024, Volume 3,  Issue 1

Negative capacitance effect plays an important role in solving the tyranny of electronic Boltzmann as well as realizing ultra-fast and low-power operation of transistors. Among the materials with negative capacitance effects, CMOS-compatible hafnium-based ferroelectric materials have received particular attention both technically and academically. In this study, we prepared high-quality hafnium-based ferroelectric/antiferroelectric thin films with a single out-of-plane crystal orientation, which were revealed to have significantly stable negative capacitance effects by capacitance enhancement phenomena, with capacitance values of -17.41 and -27.64 pF, respectively. This work is beneficial for further promoting the application of hafnium-based ferroelectric materials in the field of microelectronics and energy storage.


Negative capacitance effect


DOI: 10.1088/2752-5724/ad0524

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