2024 Vol. 3, No. 1
Negative capacitance effect plays an important role in solving the tyranny of electronic Boltzmann as well as realizing ultra-fast and low-power operation of transistors. Among the materials with negative capacitance effects, CMOS-compatible hafnium-based ferroelectric materials have received particular attention both technically and academically. In this study, we prepared high-quality hafnium-based ferroelectric/antiferroelectric thin films with a single out-of-plane crystal orientation, which were revealed to have significantly stable negative capacitance effects by capacitance enhancement phenomena, with capacitance values of -17.41 and -27.64 pF, respectively. This work is beneficial for further promoting the application of hafnium-based ferroelectric materials in the field of microelectronics and energy storage.
Negative capacitance effect
DOI: 10.1088/2752-5724/ad0524
Woven thermoelectric materials and devices enable direct conversion between thermal and electrical energy. With their lightweight, compact, noise-free operation, and precise reliability, they exhibit tremendous potential across various applications, particularly in the realm of wearable technology. Serving as a core component in devices, woven thermoelectric materials offer flexibility, wearability, and adjustability, making them capable of harnessing waste heat from irregular sources, such as the temperature differential between human skin and the environment, to sustainably power wearable devices. Therefore, further enhancing the thermoelectric performance of woven materials and optimizing device design are crucial.
Weavable Thermoelectric Materials and Devices for Wearable Electronics
DOI: 10.1088/2752-5724/ad0ca9