Volume 3 Issue 4
December  2024
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Guigang Zhou, Jinsheng Ji, Ziling Chen, Jing Shuai, Qijie Liang, Qian Zhang. Scalable electronic and optoelectronic devices based on 2D TMDs[J]. Materials Futures, 2024, 3(4): 042701. doi: 10.1088/2752-5724/ad7c6c
Citation: Guigang Zhou, Jinsheng Ji, Ziling Chen, Jing Shuai, Qijie Liang, Qian Zhang. Scalable electronic and optoelectronic devices based on 2D TMDs[J]. Materials Futures, 2024, 3(4): 042701. doi: 10.1088/2752-5724/ad7c6c
shu
Topical Review •
OPEN ACCESS

Scalable electronic and optoelectronic devices based on 2D TMDs

© 2024 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 3, Number 4
  • Received Date: 2024-07-09
  • Accepted Date: 2024-09-17
  • Revised Date: 2024-09-07
  • Publish Date: 2024-10-18
doi: 10.1088/2752-5724/ad7c6c

  • 1 School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen 518107, People's Republic of China;

  • 2 Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, People's Republic of China

Funds:

This work was financially supported by the National Natural Science Foundation of China (Grant No. 52202183), the Shenzhen Science and Technology Program (Grant No. 202206193000001), Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2023B1515120041, 2023A1515012072), and the Open Project Fund from Guangdong Provincial Key Laboratory of Materials and Technology for Energy Conversion (Grant No. MATEC2023KF003).

    Abstract
  • Materials are the building blocks of various functional applications. With Moore’s Law approaching Si’s physical limits, traditional semiconductor-based monolithic three-dimensional (M3D) integrated circuits always suffer from the issues, including electrical performance (carrier scattering), chip-overheating (low heat conductivity), electromagnetic interference. Recently, two-dimensional transition metal dichalcogenides (2D TMDs) inherit the atomically-thin thickness of 2D materials and exhibit outstanding natures, such as smooth flatness (excellent compatibility), electronic property (thickness below 1 nm), absence of dangling bonds (decreasing carrier scattering), making them highly promising for next-generation functional devices in comparison with traditional bulk materials. Up to now, 2D TMD-based transistors have already exhibited the feasibility of replacing conventional one in terms of performances. Furthermore, the technology of large-area 2D TMDs films has been greatly successful, which lays the foundation for the fabrication of scalable 2D TMD-based devices. Besides, the scalable devices based on 2D TMDs also show the prospects of realizing ultra-high-density M3D integrated circuits owing to the presence of outstanding compatibility. Herein, we focus some thriving research areas and provide a systematic review of recent advances in the field of scalable electronic and optoelectronic devices based on 2D TMDs, including large-area synthesis, property modulation, large-scale device applications, and multifunctional device integration. The research in 2D TMDs has clearly exhibited the tremendous promise for scalable diversified applications. In addition, scalable 2D TMD-based devices in terms of mass production, controllability, reproducibility, and low-cost have also been highlighted, showing the importance and benefits in modern industry. Finally, we summarize the remaining challenges and discuss the future directions of scalable 2D TMDs devices.
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