Triply degenerate semimetal PtBi<sub>2</sub> as van der Waals contact interlayer in two-dimensional transistor

Bohan Wei; Yun Li; Tinghe Yun; Yang Li; Tianhu Gui; Wenzhi Yu; Hanran Mu; Nan Cui; Weiqiang Chen; Shenghuang Lin

doi:10.1088/2752-5724/ad47cf

Volume 3 Issue 2

June 2024

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Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Hanran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin. Triply degenerate semimetal PtBi2 as van der Waals contact interlayer in two-dimensional transistor[J]. Materials Futures, 2024, 3(2): 025302. doi: 10.1088/2752-5724/ad47cf

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Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Hanran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin. Triply degenerate semimetal PtBi₂ as van der Waals contact interlayer in two-dimensional transistor[J]. Materials Futures, 2024, 3(2): 025302. doi: 10.1088/2752-5724/ad47cf

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Triply degenerate semimetal PtBi₂ as van der Waals contact interlayer in two-dimensional transistor

Bohan Wei^{1, 2}
Yun Li^{1, 3,}
Tinghe Yun¹
Yang Li^{1, 4}
Tianhu Gui^{1, 4}
Wenzhi Yu¹
Hanran Mu¹
Nan Cui^1,
Weiqiang Chen^2,
Shenghuang Lin^1,

Materials Futures, Volume 3, Number 2

Received Date: 2024-04-02
Accepted Date: 2024-05-05
Rev Recd Date: 2024-04-21
Publish Date: 2024-05-23

Article information

doi: 10.1088/2752-5724/ad47cf

1.
Songshan Lake Materials Laboratory, Dongguan 523808, People’s Republic of China
2.
MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, People’s Republic of China
3.
Institute of Physics, Chinese Academy of Science, Beijing 100190, People’s Republic of China
4.
School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, People’s Republic of China
These authors are contributed equally to this work.

More Information

Corresponding author: E-mail: liyun@sslab.org.cn; E-mail: cuinan@sslab.org.cn; E-mail: achenweiqiang@m.scnu.edu.cn; E-mail: linshenghuang@sslab.org.cn

Abstract

Abstract

AbstractThe low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple-degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi₂ in electronic devices. Leveraging a van der Waals transfer method, PtBi₂ flakes were used as interlayer contacts for metal electrodes and WS₂ in transistors. The transistor achieved a switching ratio above 10⁶ and average mobility can reach 85 cm²V⁻¹ s⁻¹, meeting integrated circuit requirements. Notably, the excellent air stability of PtBi₂ simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi₂ in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.
- triply degenerate semimetal,
- PtBi₂,
- vdW contact,
- transistor

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Conflict of interest

The authors declare no conflict of interest.

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