Volume 3 Issue 3
September  2024
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Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
Citation: Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
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Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

© 2024 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 3, Number 3
  • Received Date: 2024-02-02
  • Accepted Date: 2024-04-08
  • Publish Date: 2024-05-16
  • Ferroelectric HfO2-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO2-based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.
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