Volume 3 Issue 3
September  2024
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Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
Citation: Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
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Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

© 2024 The Author(s). Published by IOP Publishing Ltd on behalf of the Songshan Lake Materials Laboratory
Materials Futures, Volume 3, Number 3
  • Received Date: 2024-02-02
  • Accepted Date: 2024-04-08
  • Revised Date: 2024-04-01
  • Publish Date: 2024-05-16
doi: 10.1088/2752-5724/ad3bd5
  • 1.

    State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China

  • 2.

    Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou 311121, People’s Republic of China

  • 3.

    Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, People’s Republic of China

  • Co-first authors.

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    Abstract
  • AbstractFerroelectric HfO2-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO2-based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.
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    • Conflict of interest

    The authors declare no conflicts of interest.

    Author contributions

    H Liu and F Yu contributed equally to this work. Conceptualization: Y Liu, X Yu, H Dong, H Liu and F Yu; Methodology: H Liu and J Chen; Validation: H Liu and F Yu; Formal analysis: Y Liu, X Yu, B Chen, Z-D Luo, H Liu and F Yu; Investigation: H Liu, F Yu and Y Zhang; Resources: H Liu, F Yu and Z Feng; Data Curation: H Liu and F Yu; Writing—original draft: H Liu and F Yu; Writing—review & editing: Y Liu and X Yu; Visualization: H Liu and F Yu; Supervision: Y Liu, B Chen, Z-D Luo and Y Hao; Project administration: Y Liu and X Yu; Funding acquisition: G Han, Y Liu and H Liu. All authors have approved the final version of the manuscript.

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