Citation: | Leilei Qiao, Ruiting Zhao, Cheng Song, Yongjian Zhou, Qian Wang, Tian-Ling Ren, Feng Pan. Observation of stabilized negative capacitance effect in hafnium-based ferroic films[J]. Materials Futures, 2024, 3(1): 011001. doi: 10.1088/2752-5724/ad0524 |
Conflict of interest
The author declare no conflicts of interests.
Authors’ contributions
F Pan, C Song and L Qiao conceived and supervised the project. L Qiao and R Zhao deposited the films and fabricated the devices. L Qiao and Y Zhou L Qiao and Y Zhou performed the electrical measurements. F Pan, C Song, L Qiao, R Zhao, Y Zhou and Q Wang performed the data analysis and co-wrote the manuscript. All the authors discussed the results and revised the manuscript.
Funding sources
The National Key R&D Program of China (Grant No. 2021YFB3601301), the National Natural Science Foundation of China (Grant No. 52225106 and 12241404) and the Natural Science Foundation of Beijing, China (Grant No. JQ20010).
[1] |
Theis T N, Solomon P M 2010 It’s time to reinvent the transistor! Science 327 1600 doi: 10.1126/science.1187597
|
[2] |
Salahuddin S, Datta S 2008 Use of negative capacitance to provide voltage amplification for low power nanoscale devices Nano Lett. 8 405-10 doi: 10.1021/nl071804g
|
[3] |
Salvatore G A, Bouvet D, Ionescu A M 2008 Demonstration of subthreshold swing smaller than 60 mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack IEEE Int. Electron Devices Meeting (IEDM) 167-7010.1109/IEDM.2008.4796642
|
[4] |
Qiao L, Song C, Sun Y, Fayaz M U, Lu T, Yin S, Chen C, Xu H, Ren T-L, Pan F 2021 Observation of negative capacitance in antiferroelectric PbZrO3 films Nat. Commun. 12 4215 doi: 10.1038/s41467-021-24530-w
|
[5] |
Mller J, et al 2013 Ferroelectric hafnium oxide: a CMOS-compatible and highly scalable approach to future ferroelectric memories IEEE Int. Electron Devices Meeting 10.8.1-410.1109/IEDM.2013.6724605
|
[6] |
Lee H-J, Lee M, Lee K, Jo J, Yang H, Kim Y, Chae S C, Waghmare U, Lee J H 2020 Scale-free ferroelectricity induced by flat phonon bands in HfO2 Science 369 6509 doi: 10.1126/science.aba0067
|
[7] |
Cheema S S, et al 2020 Enhanced ferroelectricity in ultrathin films grown directly on silicon Nature 580 478-82 doi: 10.1038/s41586-020-2208-x
|
[8] |
Park M H, Kim H J, Kim Y J, Lee W, Kim H K, Hwang S C 2013 Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes Appl. Phys. Lett. 102 112914 doi: 10.1063/1.4798265
|
[9] |
Schroeder U, Park M H, Mikolajick T, Hwang C S 2022 The fundamentals and applications of ferroelectric HfO2 Nat. Rev. Mater. 7 653-69 doi: 10.1038/s41578-022-00431-2
|
[10] |
Hoffmann M, Slesazeck S, Mikolajick T, Hwang C S 2019 Ferroelectricity in Doped Hafnium Oxide DuxfordWoodhead Publishing p 473
|
[11] |
Khan A I, Chatterjee K, Brian W, Drapcho S, You L, Serrao C, Bakaul S R, Ramesh R, Salahuddin S 2015 Negative capacitance in a ferroelectric capacitor Nat. Mater. 14 5 doi: 10.1038/nmat4148
|
[12] |
Hoffmann M, Pei M, Chatterjee K, Khan A I, Salahuddin S, Slesazeck S, Schroeder U, Mikolajick T 2016 Direct observation of negative capacitance in polycrystalline ferroelectric HfO2 Adv. Funct. Mater. 26 8643-9 doi: 10.1002/adfm.201602869
|
[13] |
Saha A K, Datta S, Gupta S K 2018 Negative capacitance in resistor-ferroelectric and ferroelectric-dielectric networks: apparent or intrinsic? J. Appl. Phys. 123 105102 doi: 10.1063/1.5016152
|
[14] |
Hoffmann M, Khan A I, Serrao C, Lu Z, Salahuddin S, Pei M, Slesazeck S, Schroeder U, Mikolajick T 2018 Ferroelectric negative capacitance domain dynamics J. Appl. Phys. 123 184101 doi: 10.1063/1.5030072
|
[15] |
Chen J-D, Han W-H, Yang C, Zhao X-S, Guo Y-Y, Zhang X-D, Yang F-H 2020 Recent research progress of ferroelectric negative capacitance field effect transistors Acta Phys. Sin. 69 137701 doi: 10.7498/aps.69.20200354
|
[16] |
Hoffmann M, Slesazeck S, Mikolajick T 2021 Progress and future prospects of negative capacitance electronics: a materials perspective APL Mater. 9 020902 doi: 10.1063/5.0032954
|
[17] |
Wang Y, et al 2020 Record-low subthreshold-swing negative-capacitance 2D field-effect transistors Adv. Mater. 32 2005353 doi: 10.1002/adma.202005353
|
[18] |
Hoffmann M, Fengler F P G, Herzig M, Mittmann T, Max B, Schroeder U, Negrea R, Lucian P, Slesazeck S, Mikolajick T 2019 Unveiling the double-well energy landscape in a ferroelectric layer Nature 565 464-7 doi: 10.1038/s41586-018-0854-z
|
[19] |
Rollo T, Blanchini F, Giordano G, Specogna R, Esseni D 2019 Revised analysis of negative capacitance in ferroelectric-insulator capacitors: analytical and numerical results, physical insight, comparison to experiments IEEE Annual Inter. Electron Devices Meeting 10.1109/IEDM19573.2019.8993436
|
[20] |
Esseni D, Fontanini R 2021 Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors Nanoscale 13 9641-50 doi: 10.1039/D0NR06886A
|
[21] |
Cheema S S, et al 2022 Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors Nature 604 65-71 doi: 10.1038/s41586-022-04425-6
|
[22] |
Jo S, et al 2023 Negative differential capacitance in ultrathin ferroelectric Hafnia Nat. Electron. 6 390-7 doi: 10.1038/s41928-023-00959-3
|
[23] |
Park M H, Kim H J, Kim Y J, Lee W, Moon T, Hwang C S 2013 Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature Appl. Phys. Lett. 102 242905 doi: 10.1063/1.4811483
|
[24] |
Ohtaka O, Fukui H, Kunisada T, Fujisawa T O 2004 Phase relations and volume changes of hafnia under high pressure J. Am. Ceram. Soc. 84 5 doi: 10.1111/j.1151-2916.2001.tb00843.x
|
[25] |
Starschich S, Griesche D, Schneller T, Waser R, Bottger U 2014 Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrode Appl. Phys. Lett. 104 202903 doi: 10.1063/1.4879283
|
[26] |
Hsain H A, Lee Y, Materano M, Mittmann T, Payne A, Mikolajick T, Schroeder U, Parsons G N, Jones J L 2022 Many routes to ferroelectric HfO2: a review of current deposition methods J. Vac. Sci. Technol. A 40 010803 doi: 10.1116/6.0001317
|
[27] |
Pujar P, Cho H, Gandla S, Naqi M, Hong S, Kim S 2021 Sub-thermionic negative capacitance field effect transistors with solution combustion-derived Hf0.5Zr0.5O2 Adv. Funct. Mater. 31 2103748 doi: 10.1002/adfm.202103748
|
[28] |
Song J, Qi Y, Xiao Z, Wang K, Li D, Kim S-H, Kingon A I, Rappe A M, Hong X 2022 Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation npj 2D Mater. Appl. 6 77 doi: 10.1038/s41699-022-00353-1
|
[29] |
Park H W, Oh M, Hwang C S 2022 Negative capacitance from the inhomogenous stray field in a ferroelectric-dielectric structure Adv. Funct. Mater. 32 2200389 doi: 10.1002/adfm.202200389
|
[30] |
Cho H W, Pujar P, Choi M, Kang S, Hong S, Park J, Baek S, Kim Y, Lee J, Kim S 2021 Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors npj 2D Mater. Appl. 5 1-8 doi: 10.1038/s41699-021-00229-w
|
[31] |
Cho H, Pujar P, Choi M, Naqi M, Cho Y, Rho H Y, Lee J, Kim S 2021 Expeditiously crystallized pure orthorhombic-Hf0.5Zr0.5O2 for negative capacitance field effect transistors ACS Appl. Mater. Interfaces 13 60250-60 doi: 10.1021/acsami.1c21387
|
[32] |
Khan A I, Keshavarzi A, Datta S 2020 The future of ferroelectric field-effect transistor technology Nat. Electron. 3 588-97 doi: 10.1038/s41928-020-00492-7
|
[33] |
Zhang Z, Su M, Li G, Wang J, Zhang X, Ho J C, Wang C, Wan D, Liu X, Liao L 2020 Stable hysteresis-free MoS2 transistors with low-k/high/k bilayer gate dielectrics IEEE Electron. Device Lett. 41 1036-9 doi: 10.1109/LED.2020.3000259
|
[34] |
Zubko P, Wojde J C, Hadjimichael M, Fernandez-Pena S, Sen A, Luk’yanchuk I, Triscone J-M, iguez J 2016 Negative capacitance in multidomain ferroelectric superlattices Nature 534 15 doi: 10.1038/nature17659
|
[35] |
Yadav A K, et al 2019 Spatially resolved steady-state negative capacitance Nature 565 468-71 doi: 10.1038/s41586-018-0855-y
|
[36] |
Park M H, Lee Y H, Hwang C S 2019 Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory Nanoscale 11 19477-87 doi: 10.1039/C9NR05768D
|
[37] |
Park M H, Lee Y H, Mikolajick T, Schroeder U, Hwang C S 2019 Thermodynamic and kinetic origins of ferroelectricity in fluorite structure oxides Adv. Electron. Mater. 5 1800522 doi: 10.1002/aelm.201800522
|
[38] |
Zhao D, Lenz T, Gelinck G H, Groen P, Damjanovic D, de Leeuw D M, Katsouras I 2019 Depolarization of multidomain ferroelectric materials Nat. Commun. 10 2547 doi: 10.1038/s41467-019-10530-4
|
[39] |
Luk’yanchuk I, Tikhonov Y, Sen A, Razumnaya A, Vinokur V M 2019 Harnessing ferroelectric domains for negative capacitance Commun. Phys. 2 22 doi: 10.1038/s42005-019-0121-0
|
[40] |
Park H W, Roh J, Lee Y B, Hwang C S 2019 Modeling of negative capacitance in ferroelectric thin films Adv. Mater. 31 1805266 doi: 10.1002/adma.201805266
|
[41] |
Wei Y, et al 2018 A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films Nat. Mater. 17 1095-100 doi: 10.1038/s41563-018-0196-0
|
[42] |
Yoong H Y, et al 2018 Epitaxial ferroelectric Hf0.5Zr0.5O2 thin films and their implementations in memristors for brain-inspired computing Adv. Funct. Mater. 28 1806037 doi: 10.1002/adfm.201806037
|
[43] |
Estanda S, Dix N, Gazquez J, Fina I, Lyu J, Chisholm M F, Fontcuberta J, Snchez F 2019 Engineering ferroelectric Hf0.5Zr0.5O2 thin films by epitaxial stress ACS Appl. Electron. Mater. 1 1449-57 doi: 10.1021/acsaelm.9b00256
|
[44] |
Pintilie L, Lisca M, Alexe M 2005 Polarization reversal and capacitance-voltage characteristic of epitaxial Pb(Zr,Ti)O3 layers Appl. Phys. Lett. 86 192902 doi: 10.1063/1.1926403
|
[45] |
Luo Q, et al 2020 A highly CMOS compatible hafnia-based ferroelectric diode Nat. Commun. 11 1391 doi: 10.1038/s41467-020-15159-2
|
[46] |
Catalan G, O’Neill D, Bowman R M, Gregg J M 2000 Relaxor features in ferroelectric superlattices: a maxwell-wagner approach Appl. Phys. Lett. 77 3078-80 doi: 10.1063/1.1324729
|
[47] |
Zhang Z, et al 2022 Flexible polystyrene/graphene composites with epsilon-near-zero properties Adv. Compos. Hybrid Mater. 5 1054-66 doi: 10.1007/s42114-022-00486-3
|
[48] |
Xie P, et al 2022 Recent advances in radio-frequency negative dielectric metamaterials by designing heterogeneous composites Adv. Compos. Hybrid Mater. 5 679-95 doi: 10.1007/s42114-022-00479-2
|
[49] |
Wu H, Zhong Y, Tang Y, Huang Y, Liu G, Sun W, Xie P, Pan D, Liu C, Guo Z 2022 Precise regulation of weekly negative permittivity in CaCu3Ti4O12 metacomposites by synergistic effects of carbon nanotubes and grapheme Adv. Compos. Hybrid Mater. 5 419-30 doi: 10.1007/s42114-021-00378-y
|
[50] |
Chang S C, et al 2021 FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory 2021 IEEE Inter. Electron Devices Meeting (IEDM) 33.2.1-410.1109/IEDM19574.2021.9720510
|
[51] |
Yan X, et al 2019 Robust Ag/ZrO2/WS2/Pt memristor for neuromorphic computing ACS Appl. Mater. Interfaces 11 48029-38 doi: 10.1021/acsami.9b17160
|
[52] |
Hoffmann M, et al 2022 Antiferroelectric negative capacitance from a structural phase transition in zirconia Nat. Commun. 13 1228 doi: 10.1038/s41467-022-28860-1
|
[53] |
Ali F, Ali T, Lehninger D, Sunbul A, Viegas A, Sachdeva R, Abbas A, Czernohorsky M, Seidel K 2022 Fluorite-structured ferroelectric and antiferroelectric materials: a gateway of miniaturized electronic devices Adv. Funct. Mater. 32 2201737 doi: 10.1002/adfm.202201737
|
[54] |
Cheema S S, et al 2022 Emergent ferroelectricity in subnanometer binary oxide films on silicon Science 5 376 doi: 10.1126/science.abm8642
|
[55] |
Luo X, Toprasertpong K, Takenaka M, Takagi S 2021 Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition Appl. Phys. Lett. 118 232904 doi: 10.1063/5.0051068
|
[56] |
Gao S, et al 2022 Highly transmitted silver nanowires-SWCNTs conductive flexible film by nested density structure and aluminum-doped zinc oxide capping layer for flexible amorphous silicon solar cells J. Mater. Sci. Technol. 126 152-60 doi: 10.1016/j.jmst.2022.03.012
|
[57] |
Hou C, et al 2023 Boosted lithium storage performance by local build-in electric field derived by oxygen vacancies in 3D holey N-doped carbon structure decorated with molybdenum dioxide J. Mate. Sci. Technol. 142 185-95 doi: 10.1016/j.jmst.2022.10.007
|
[58] |
Ma R, et al 2022 Enhanced energy storage of lead-free mixed oxide core double-shell barium strontium zirconate titanate@magnesium aluminate@zinc oxide-boron trioxide-silica ceramic nanocomposites Adv. Compos. Hybrid Mater. 5 1477-89 doi: 10.1007/s42114-022-00509-z
|
[59] |
Wu N, Zhao B, Chen X, Hou C, Huang M, Alhadhrami A, Mersal G A M, Ibrahim M M, Tian J 2022 Dielectric properties and electromagnetic simulation of molybdenum disulfide and ferric oxide-modified Ti3C2TX MXene hetero-structure for potential microwave absorption Adv. Compos. Hybrid Mater. 5 1548-56 doi: 10.1007/s42114-022-00490-7
|
[60] |
Jiang X, et al 2022 Manipulation of current rectification in van der Waals ferroionic CuInP2S6 Nat. Commun. 13 574 doi: 10.1038/s41467-022-28235-6
|
[61] |
Dai S, et al 2022 Robustly stable ferroelectric polarization states enable long-term nonvolatile storage against radiation in hfo2-based ferroelectric field-effect transistors ACS Adv. Appl. Mater. Interfaces 14 51459-67 doi: 10.1021/acsami.2c13392
|
[62] |
Liao J, Dai S, Peng R-C, Yang J, Zeng B, Liao M, Zhou Y 2023 HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: a review Fundam. Res. 3 332-45 doi: 10.1016/j.fmre.2023.02.010
|
011001-mfad0524supp1.docx |