Citation: | Jiang-Jing Wang, Xiaozhe Wang, Yudong Cheng, Jieling Tan, Chao Nie, Zhe Yang, Ming Xu, Xiangshui Miao, Wei Zhang, En Ma. Tailoring the oxygen concentration in Ge-Sb-O alloys to enable femtojoule-level phase-change memory operations[J]. Materials Futures, 2022, 1(4): 045302. doi: 10.1088/2752-5724/aca07b |
Conflict of interest
The authors declare no competing interests
[1] |
Wong H-S P, Salahuddin S 2015 Memory leads the way to better computing Nat. Nanotechnol. 10 191-4 doi: 10.1038/nnano.2015.29
|
[2] |
Zhang Z, Wang Z, Shi T, Bi C, Rao F, Cai Y, Liu Q, Wu H, Zhou P 2020 Memory materials and devices: from concept to application InfoMat. 2 261-90 doi: 10.1002/inf2.12077
|
[3] |
Wang Z, Wu H, Burr G W, Hwang C S, Wang K L, Xia Q, Yang J J 2020 Resistive switching materials for information processing Nat. Rev. Mater. 5 173-95 doi: 10.1038/s41578-019-0159-3
|
[4] |
Zidan M A, Strachan J P, Lu W D 2018 The future of electronics based on memristive systems Nat. Electron. 1 22-29 doi: 10.1038/s41928-017-0006-8
|
[5] |
Sebastian A, Le Gallo M, Khaddam-Aljameh R, Eleftheriou E 2020 Memory devices and applications for in-memory computing Nat. Nanotechnol. 15 529-44 doi: 10.1038/s41565-020-0655-z
|
[6] |
Zhang Y, et al 2020 Brain-inspired computing with memristors: challenges in devices, circuits, and systems Appl. Phys. Rev. 7 011308 doi: 10.1063/1.5124027
|
[7] |
Wuttig M, Yamada N 2007 Phase-change materials for rewriteable data storage Nat. Mater. 6 824-32 doi: 10.1038/nmat2009
|
[8] |
Zhang W, Mazzarello R, Wuttig M, Ma E 2019 Designing crystallization in phase-change materials for universal memory and neuro-inspired computing Nat. Rev. Mater. 4 150-68 doi: 10.1038/s41578-018-0076-x
|
[9] |
Sebastian A, Le Gallo M, Burr G W, Kim S, BrightSky M, Eleftheriou E 2018 Tutorial: brain-inspired computing using phase-change memory devices J. Appl. Phys. 124 111101 doi: 10.1063/1.5042413
|
[10] |
Wong H-S P, Raoux S, Kim S, Liang J, Reifenberg J P, Rajendran B, Asheghi M, Goodson K E 2010 Phase change memory Proc. IEEE 98 2201 doi: 10.1109/JPROC.2010.2070050
|
[11] |
Song Z, Song S, Zhu M, Wu L, Ren K, Song W, Feng S 2018 From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage Sci. China Inf. Sci. 61 081302 doi: 10.1007/s11432-018-9404-2
|
[12] |
Xu M, Mai X, Lin J, Zhang W, Li Y, He Y, Tong H, Hou X, Zhou P, Miao X 2020 Recent advances on neuromorphic devices based on chalcogenide phase-change materials Adv. Funct. Mater. 30 2003419 doi: 10.1002/adfm.202003419
|
[13] |
Xu M, Xu M, Miao X 2022 Deep machine learning unravels the structural origin of midgap states in chalcogenide glass for highdensity memory integration InfoMat. 4 e12315 doi: 10.1002/inf2.12315
|
[14] |
Pan F, Gao S, Chen C, Song C, Zeng F 2014 Recent progress in resistive random access memories: materials, switching mechanisms, and performance Mater. Sci. Eng. R 83 1-59 doi: 10.1016/j.mser.2014.06.002
|
[15] |
Scott J F, de Araujo C A P 1989 Ferroelectric memories Science 246 1400-5 doi: 10.1126/science.246.4936.1400
|
[16] |
Kent A D, Worledge D C 2015 A new spin on magnetic memories Nat Nanotechnol. 10 187-91 doi: 10.1038/nnano.2015.24
|
[17] |
Liu L, Sun Y, Huang X, Liu C, Tang Z, Zeng S, Zhang D W, Deng S, Zhou P 2022 Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS2-channel transistor Mater. Futures 1 025301 doi: 10.1088/2752-5724/ac7067
|
[18] |
Ouyang J, Chu C-W, Szmanda C R, Ma L, Yang Y 2004 Programmable polymer thin film and non-volatile memory device Nat. Mater. 3 918-22 doi: 10.1038/nmat1269
|
[19] |
Yoon K J, Kim Y, Hwang C S 2019 What will come after VNANDvertical resistive switching memory? Adv. Electron. Mater. 5 1800914 doi: 10.1002/aelm.201800914
|
[20] |
Ovshinsky S 1968 Reversible electrical switching phenomena in disordered structures Phys. Rev. Lett. 21 1450-3 doi: 10.1103/PhysRevLett.21.1450
|
[21] |
Redaelli A, Pirovano A, Pellizzer F, Lacaita A L, Ielmini D, Bez R 2004 Electronic switching effect and phase change transition in chalcogenide materials IEEE Electron. Dev. Lett. 25 684 doi: 10.1109/LED.2004.836032
|
[22] |
Siegrist T, Jost P, Volker H, Woda M, Merkelbach P, Schlockermann C, Wuttig M 2011 Disorder-induced localization in crystalline phase-change materials Nat. Mater. 10 202-8 doi: 10.1038/nmat2934
|
[23] |
Zhang W, Thiess A, Zalden P, Zeller R, Dederichs P H, Raty J-Y, Wuttig M, Blgel S, Mazzarello R 2012 Role of vacancies in metal-insulator transitions of crystalline phase-change materials Nat. Mater. 11 952-6 doi: 10.1038/nmat3456
|
[24] |
Yamada N, Ohno E, Nishiuchi K, Akahira N, Takao M 1991 Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory J. Appl. Phys. 69 2849-56 doi: 10.1063/1.348620
|
[25] |
Shportko K, Kremers S, Woda M, Lencer D, Robertson J, Wuttig M 2008 Resonant bonding in crystalline phase-change materials Nat. Mater. 7 653-8 doi: 10.1038/nmat2226
|
[26] |
Huang B, Robertson J 2010 Bonding origin of optical contrast in phase-change memory materials Phys. Rev. B 81 081204(R) doi: 10.1103/PhysRevB.81.081204
|
[27] |
Hosseini P, Wright C D, Bhaskaran H 2014 An optoelectronic framework enabled by low-dimensional phase-change films Nature 511 206-11 doi: 10.1038/nature13487
|
[28] |
Feldmann J, et al 2021 Parallel convolutional processing using an integrated photonic tensor core Nature 589 52-58 doi: 10.1038/s41586-020-03070-1
|
[29] |
Zhang W, Mazzarello R, Ma E 2019 Phase-change materials in electronics and photonics MRS Bull. 44 686-90 doi: 10.1557/mrs.2019.201
|
[30] |
Raty J Y, Schumacher M, Golub P, Deringer V L, Gatti C, Wuttig M 2019 A quantum-mechanical map for bonding and properties in solids Adv. Mater. 31 1806280 doi: 10.1002/adma.201806280
|
[31] |
Zhang W, Ma E 2020 Unveiling the structural origin to control resistance drift in phase-change memory materials Mater. Today 41 156-76 doi: 10.1016/j.mattod.2020.07.016
|
[32] |
Lee T H, Elliott S R 2022 Hypervalency in amorphous chalcogenides Nat. Commun. 13 1458 doi: 10.1038/s41467-022-29054-5
|
[33] |
Fong S W, Neumann C M, Wong H-S P 2017 Phase-change memorytowards a storage-class memory IEEE Trans. Electron. Dev. 64 4374-85 doi: 10.1109/TED.2017.2746342
|
[34] |
Xiong F, Liao A D, Estrada D, Pop E 2011 Low-power switching of phase-change materials with carbon nanotube electrodes Science 332 568-70 doi: 10.1126/science.1201938
|
[35] |
Xiong F, Bae M-H, Dai Y, Liao A D, Behnam A, Carrion E A, Hong S, Ielmini D, Pop E 2013 Self-aligned nanotube-nanowire phase change memory Nano Lett. 13 464-9 doi: 10.1021/nl3038097
|
[36] |
Wang X, et al 2022 Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact Adv. Sci. 9 e2202222 doi: 10.1002/advs.202202222
|
[37] |
Rao F, et al 2017 Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing Science 358 1423-7 doi: 10.1126/science.aao3212
|
[38] |
Akola J, Jones R O 2017 Speeding up crystallization Science 358 1386 doi: 10.1126/science.aaq0476
|
[39] |
Zewdie G M, Zhou Y-X, Sun L, Rao F, Deringer V L, Mazzarello R, Zhang W 2019 Chemical design principles for cache-type Sc-Sb-Te phase-change memory materials Chem. Mater. 31 4008-15 doi: 10.1021/acs.chemmater.9b00510
|
[40] |
Ding K, Chen B, Chen Y, Wang J, Shen X, Rao F 2020 Recipe for ultrafast and persistent phase-change memory materials NPG Asia Mater. 12 63 doi: 10.1038/s41427-020-00246-z
|
[41] |
Chen B, et al 2019 Kinetics features conducive to cache-type nonvolatile phase-change memory Chem. Mater. 31 8794-800 doi: 10.1021/acs.chemmater.9b02598
|
[42] |
Wang X-P, Li X-B, Chen N-K, Bang J, Nelson R, Ertural C, Dronskowski R, Sun H-B, Zhang S 2020 Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation NPJ Comput. Mater. 6 31 doi: 10.1038/s41524-020-0303-z
|
[43] |
Qiao C, Guo Y R, Wang S Y, Xu M, Miao X, Wang C Z, Ho K M 2019 Local structure origin of ultrafast crystallization driven by high-fidelity octahedral clusters in amorphous Sc0.2Sb2Te3 Appl. Phys. Lett. 114 071901 doi: 10.1063/1.5085502
|
[44] |
Hu S, Xiao J, Zhou J, Elliott S R, Sun Z 2020 Synergy effect of co-doping Sc and Y in Sb2Te3 for phase-change memory J. Mater. Chem. C 8 6672-9 doi: 10.1039/D0TC01693D
|
[45] |
Hu S, Liu B, Li Z, Zhou J, Sun Z 2019 Identifying optimal dopants for Sb2Te3 phase-change material by high-throughput ab initio calculations with experiments Comput. Mater. Sci. 165 51-58 doi: 10.1016/j.commatsci.2019.04.028
|
[46] |
Li Z, Si C, Zhou J, Xu H, Sun Z 2016 Yttrium-Doped Sb2Te3: a promising material for phase-change Memory ACS Appl. Mater. Interfaces 8 26126-34 doi: 10.1021/acsami.6b08700
|
[47] |
Li Z, Miao N, Zhou J, Xu H, Sun Z 2017 Reduction of thermal conductivity in YxSb2-xTe3 for phase change memory J. Appl. Phys. 122 195107 doi: 10.1063/1.5004495
|
[48] |
Liu B, Liu W, Li Z, Li K, Wu L, Zhou J, Song Z, Sun Z 2020 Y-Doped Sb2Te3 phase-change materials: toward a universal memory ACS Appl. Mater. Interfaces 12 20672-9 doi: 10.1021/acsami.0c03027
|
[49] |
Liu B, Li K, Liu W, Zhou J, Wu L, Song Z, Elliott S R, Sun Z 2021 Multi-level phase-change memory with ultralow power consumption and resistance drift Sci. Bull. 66 2217 doi: 10.1016/j.scib.2021.07.018
|
[50] |
Zhou Y, Sun L, Zewdie G M, Mazzarello R, Deringer V L, Ma E, Zhang W 2020 Bonding similarities and differences between Y-Sb-Te and Sc-Sb-Te phase-change memory materials J. Mater. Chem. C 8 3646-54 doi: 10.1039/D0TC00096E
|
[51] |
Zhu M, et al 2014 One order of magnitude faster phase change at reduced power in Ti-Sb-Te Nat. Commun. 5 4086 doi: 10.1038/ncomms5086
|
[52] |
Xia M, Zhu M, Wang Y, Song Z, Rao F, Wu L, Cheng Y, Song S 2015 Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory ACS Appl. Mater. Interfaces 7 7627-34 doi: 10.1021/acsami.5b00083
|
[53] |
Zhu M, Xia M, Song Z, Cheng Y, Wu L, Rao F, Song S, Wang M, Lu Y, Feng S 2015 Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions Nanoscale 7 9935-44 doi: 10.1039/C4NR07408D
|
[54] |
Rao F, Song Z, Cheng Y, Liu X, Xia M, Li W, Ding K, Feng X, Zhu M, Feng S 2015 Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material Nat. Commun. 6 10040 doi: 10.1038/ncomms10040
|
[55] |
Zheng Y, Qi R, Cheng Y, Song Z 2019 The crystallization mechanism of zirconium-doped Sb2Te3 material for phase-change random-access memory application J. Mater. Sci., Mater. Electron. 31 5861-5 doi: 10.1007/s10854-019-02668-0
|
[56] |
Xue Y, Cheng Y, Zheng Y, Yan S, Song W, Lv S, Song S, Song Z 2020 Phase change memory based on Ta-Sb-Te alloytowards a universal memory Mater. Today Phys. 15 100266 doi: 10.1016/j.mtphys.2020.100266
|
[57] |
Zhao J, Song W X, Xin T, Song Z 2021 Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials Nat. Commun. 12 6473 doi: 10.1038/s41467-021-26696-9
|
[58] |
Chong T C, Shi L P, Zhao R, Tan P K, Li J M, Lee H K, Miao X S, Du A Y, Tung C H 2006 Phase change random access memory cell with superlattice-like structure Appl. Phys. Lett. 88 122114 doi: 10.1063/1.2181191
|
[59] |
Simpson R E, Fons P, Kolobov A V, Fukaya T, Krbal M, Yagi T, Tominaga J 2011 Interfacial phase-change memory Nat. Nanotechnol. 6 501-5 doi: 10.1038/nnano.2011.96
|
[60] |
Khan A I, Daus A, Islam R, Neilson K M, Lee H R, Wong H-S P, Pop E 2021 Ultralow-switching current density multilevel phase-change memory on a flexible substrate Science 373 1243-7 doi: 10.1126/science.abj1261
|
[61] |
Li X-B, Chen N-K, Wang X-P, Sun H-B 2018 Phase-change superlattice materials toward low power consumption and high density data storage: microscopic picture, working principles, and optimization Adv. Funct. Mater. 28 1803380 doi: 10.1002/adfm.201803380
|
[62] |
Lotnyk A, Behrens M, Rauschenbach B 2019 Phase change thin films for non-volatile memory applications Nanoscale Adv. 1 3836-57 doi: 10.1039/C9NA00366E
|
[63] |
Momand J, Wang R, Boschker J E, Verheijen M A, Calarco R, Kooi B J 2015 Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb2Te3 superlattices Nanoscale 7 19136-43 doi: 10.1039/C5NR04530D
|
[64] |
Boniardi M, Boschker J E, Momand J, Kooi B J, Redaelli A, Calarco R 2019 Evidence for thermal-based transition in Super-lattice (SL) phase change memory Phys. Status Solidi RRL 13 1800634 doi: 10.1002/pssr.201800634
|
[65] |
Trbnec D, Castellani N, Bernier N, Sever V, Kowalczyk P, Bernard M, Cyrille M-C, Tran N-P, Hippert F, No P 2021 Improvement of phasechange memory performance by means of GeTe/Sb2Te3 superlattices Phys. Status Solidi RRL 15 2000538 doi: 10.1002/pssr.202000538
|
[66] |
Ding K, Wang J, Zhou Y, Tian H, Lu L, Mazzarello R, Jia C, Zhang W, Rao F, Ma E 2019 Phase-change heterostructure enables ultralow noise and drift for memory operation Science 366 210-5 doi: 10.1126/science.aay0291
|
[67] |
Shen J, Lv S, Chen X, Li T, Zhang S, Song Z, Zhu M 2019 Thermal barrier phase change memory ACS Appl. Mater. Interfaces 11 5336-43 doi: 10.1021/acsami.8b18473
|
[68] |
Gholipour B 2019 The promise of phase-change materials Science 366 186-7 doi: 10.1126/science.aaz1129
|
[69] |
Wang X, Wu Y, Zhou Y, Deringer V L, Zhang W 2021 Bonding nature and optical contrast of TiTe2/Sb2Te3 phase-change heterostructure Mater. Sci. Semicond. Process. 135 106080 doi: 10.1016/j.mssp.2021.106080
|
[70] |
Wang X, et al 2022 Unusual phase transitions in two-dimensional telluride heterostructures Mater. Today 54 52-62 doi: 10.1016/j.mattod.2022.02.009
|
[71] |
Ding K, Li T, Chen B, Rao F 2021 Reliable 2D phase transitions for low-noise and long-life memory programming Front. Nanotechnol. 3 649560 doi: 10.3389/fnano.2021.649560
|
[72] |
Hatayama S, Yamamoto T, Mori S, Song Y-H, Sutou Y 2022 Understanding the origin of low-energy operation characteristics for Cr2Ge2Te6 phase-change material: enhancement of thermal efficiency in the high-scaled memory device ACS Appl. Mater. Interfaces 14 44604-13 doi: 10.1021/acsami.2c13189
|
[73] |
Yang Z, et al 2022 Designing conductive-bridge phase-change memory to enable ultralow programming power Adv. Sci. 9 2103478 doi: 10.1002/advs.202103478
|
[74] |
Morilla M C, Afonso C N, Petford-Long A K, Doole R C 1997 The role of oxygen content in the crystallization kinetics of (Sb0.9Ge0.10)Oxfilms Phil. Mag. A 75 791-802 doi: 10.1080/01418619708207202
|
[75] |
Solis J, Morilla M C, Afonso C N 1998 Laser-induced structural relaxation and crystallization phenomena in the picosecond time scale in GeSbO thin films J. Appl. Phys. 84 5543-6 doi: 10.1063/1.368855
|
[76] |
Wu W, He Z, Chen S, Zhai J, Song S, Song Z 2017 Investigation on the crystallization properties and structure of oxygen-doped Ge8Sb92 phase change thin films J. Phys. D: Appl. Phys. 50 095602 doi: 10.1088/1361-6463/aa5611
|
[77] |
Solis J, Afonso C N, Trull J F, Morilla M C 1994 Fast crystallization GeSb alloys for optical data storage J. Appl. Phys. 75 7788-94 doi: 10.1063/1.356584
|
[78] |
van Pieterson L, Lankhorst M H R, van Schijndel M, Kuiper A E T, Roosen J H J 2005 Phase-change recording materials with a growth-dominated crystallization mechanism: a materials overview J. Appl. Phys. 97 083520 doi: 10.1063/1.1868860
|
[79] |
Zalden P, Bichara C, van Eijk J, Braun C, Bensch W, Wuttig M 2010 Atomic structure of amorphous and crystallized Ge15Sb85 J. Appl. Phys. 107 104312 doi: 10.1063/1.3380667
|
[80] |
Krusin-Elbaum L, Shakhvorostov D, Cabral C, Raoux S, Jordan-Sweet J L 2010 Irreversible altering of crystalline phase of phase-change Ge-Sb thin films Appl. Phys. Lett. 96 121906 doi: 10.1063/1.3361656
|
[81] |
Mazzarello R, Caravati S, Angioletti-Uberti S, Bernasconi M, Parrinello M 2010 Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials Phys. Rev. Lett. 104 085503 doi: 10.1103/PhysRevLett.104.085503
|
[82] |
Andrikopoulos K S, Yannopoulos S N, Voyiatzis G A, Kolobov A V, Ribes M, Tominaga J 2006 Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition J. Phys.: Condens. Matter 18 965-79 doi: 10.1088/0953-8984/18/3/014
|
[83] |
Andrikopoulos K S, Yannopoulos S N, Kolobov A V, Fons P, Tominaga J 2007 Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials J. Phys. Chem. Solids 68 1074-8 doi: 10.1016/j.jpcs.2007.02.027
|
[84] |
Sosso G C, Caravati S, Mazzarello R, Bernasconi M 2011 Raman spectra of cubic and amorphous Ge2Sb2Te5 from first principles Phys. Rev. B 83 134201 doi: 10.1103/PhysRevB.83.134201
|
[85] |
Poska M, Plewa J 2020 Crystallization of GeO2-Al2O3-Bi2O3 glass Crystals 10 522 doi: 10.3390/cryst10060522
|
[86] |
Zhang Y, Feng J, Cai B 2010 Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film Appl. Surf. Sci. 256 2223-7 doi: 10.1016/j.apsusc.2009.09.077
|
[87] |
Nolot E, Sabbione C, Pessoa W, Prazakova L, Navarro G 2021 Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: an x-ray photoelectron study Appl. Surf. Sci. 536 147703 doi: 10.1016/j.apsusc.2020.147703
|
[88] |
Tuma T, Pantazi A, Le Gallo M, Sebastian A, Eleftheriou E 2016 Stochastic phase-change neurons Nat. Nanotechnol. 11 693-9 doi: 10.1038/nnano.2016.70
|
[89] |
Noor N, Silva H 2020 Phase Change Memory for Physical Unclonable Functions, Applications of Emerging Memory TechnologyBerlin:Springer 59-91
|