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Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides
doi: 10.1088/2752-5724/ad3bd5
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Abstract: AbstractFerroelectric HfO2-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO2-based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.
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Key words:
- ferroelectric /
- binary oxide /
- mobile ion /
- amorphous dielectric /
- nonvolatile memory
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Figure 1. (a)-(d) HRTEM image of the emerging ferroelectric materials-based MIM and MOS capacitor with amorphous ultrathin binary oxide films (ZrOx, AlOx, HfOx, SiOx). (e) Measured P-V characteristics of the ferroelectric materials based on MIM and MOS capacitors with different binary oxide films at 1 kHz. Ferroelectric P-V curves can be observed.
Figure 2. (a) PUND measurement of a MIM capacitor at 1 kHz. The displacement current is confirmed. (b) Detection of local SHG in a ZrOx thin film. (c) Amplitude and phase images of PFM measurement for the ZrOx/TaN sample. Phase change indicates the opposite polarity. (d) TOF-SIMS composition profiles of O18 and O16 normalized for TaN/ZrOx/TaN samples. Relative concentration changes of the O18/O16 ratio at the TaN/ZrOx interface suggest that polarization is accompanied by the migration of oxygen ions.
Figure 3. (a) Extracted PPUND-V curves of MIM capacitors with various frequencies, showing strong frequency dependence. (b) Simulated PPUND-V hysteresis curves for various frequencies. (c) The measured and (d) the simulated PPUND-V hysteresis curves for various sweeping voltage amplitudes.
Figure 4. (a)-(f) P-V and I-V curves under different trapping-detrapping processes of oxygen vacancies modulated by reset and set pulse. Paraelectric-type and ferroelectric-type characteristics can be reversibly switched. (g) Multiple capacitive states are achieved and are measured at 1 kHz for (a)-(f) due to the modulation of oxygen vacancies. (h) Multiple resistance states are obtained. The high resistance state corresponds to the low capacitive state and the low resistance state corresponds to the high capacitive state, respectively. (i) Cycle-to-cycle variability of multiple capacitive states.
Figure 5. (a) The schematic of the simulated MIFET. (b) Comparison of ID-VGS curves between the simulated results of MIFET and the normal FET without mobile ions at VDS= -0.05 V. (c) Schematic cross-section of SiOx-based MIFET. (d) HRTEM images of the fabricated SiOx MIFET gate stack, showing the amorphous SiOx film with a thickness of 4.5 nm. (e) Measured P-V characteristics of the TaN/SiOx/Ge gate stack. (f) Measured ID-VGS curves of the SiOx MIFET at VDS = -0.05 V. (g) Memory window of SiOx MIFET under various PGM/ERS conditions; the operating voltage can reach below ±1 V.
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