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Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

Huan Liu Fei Yu Bing Chen Zheng-Dong Luo Jiajia Chen Yong Zhang Ze Feng Hong Dong Xiao Yu Yan Liu Genquan Han Yue Hao

Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
Citation: Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides[J]. Materials Futures, 2024, 3(3): 035701. doi: 10.1088/2752-5724/ad3bd5
Paper •
OPEN ACCESS

Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

doi: 10.1088/2752-5724/ad3bd5
More Information
  • Figure  1.  (a)-(d) HRTEM image of the emerging ferroelectric materials-based MIM and MOS capacitor with amorphous ultrathin binary oxide films (ZrOx, AlOx, HfOx, SiOx). (e) Measured P-V characteristics of the ferroelectric materials based on MIM and MOS capacitors with different binary oxide films at 1 kHz. Ferroelectric P-V curves can be observed.

    Figure  2.  (a) PUND measurement of a MIM capacitor at 1 kHz. The displacement current is confirmed. (b) Detection of local SHG in a ZrOx thin film. (c) Amplitude and phase images of PFM measurement for the ZrOx/TaN sample. Phase change indicates the opposite polarity. (d) TOF-SIMS composition profiles of O18 and O16 normalized for TaN/ZrOx/TaN samples. Relative concentration changes of the O18/O16 ratio at the TaN/ZrOx interface suggest that polarization is accompanied by the migration of oxygen ions.

    Figure  3.  (a) Extracted PPUND-V curves of MIM capacitors with various frequencies, showing strong frequency dependence. (b) Simulated PPUND-V hysteresis curves for various frequencies. (c) The measured and (d) the simulated PPUND-V hysteresis curves for various sweeping voltage amplitudes.

    Figure  4.  (a)-(f) P-V and I-V curves under different trapping-detrapping processes of oxygen vacancies modulated by reset and set pulse. Paraelectric-type and ferroelectric-type characteristics can be reversibly switched. (g) Multiple capacitive states are achieved and are measured at 1 kHz for (a)-(f) due to the modulation of oxygen vacancies. (h) Multiple resistance states are obtained. The high resistance state corresponds to the low capacitive state and the low resistance state corresponds to the high capacitive state, respectively. (i) Cycle-to-cycle variability of multiple capacitive states.

    Figure  5.  (a) The schematic of the simulated MIFET. (b) Comparison of ID-VGS curves between the simulated results of MIFET and the normal FET without mobile ions at VDS= -0.05 V. (c) Schematic cross-section of SiOx-based MIFET. (d) HRTEM images of the fabricated SiOx MIFET gate stack, showing the amorphous SiOx film with a thickness of 4.5 nm. (e) Measured P-V characteristics of the TaN/SiOx/Ge gate stack. (f) Measured ID-VGS curves of the SiOx MIFET at VDS = -0.05 V. (g) Memory window of SiOx MIFET under various PGM/ERS conditions; the operating voltage can reach below ±1 V.

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  • 收稿日期:  2024-02-02
  • 录用日期:  2024-04-08
  • 修回日期:  2024-04-01
  • 刊出日期:  2024-05-16

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