• 中文核心期刊要目总览
  • 中国科技核心期刊
  • 中国科学引文数据库(CSCD)
  • 中国科技论文与引文数据库(CSTPCD)
  • 中国学术期刊文摘数据库(CSAD)
  • 中国学术期刊(网络版)(CNKI)
  • 中文科技期刊数据库
  • 万方数据知识服务平台
  • 中国超星期刊域出版平台
  • 国家科技学术期刊开放平台
  • 荷兰文摘与引文数据库(SCOPUS)
  • 日本科学技术振兴机构数据库(JST)

Evidence for reversible oxygen ion movement during electrical pulsing: enabler of emerging ferroelectricity in binary oxides

  • Abstract: Abstract Ferroelectric HfO2-based materials and devices show promising potential for applications in information technology but face challenges with inadequate electrostatic control, degraded reliability, and serious variation in effective oxide thickness scaling. We demonstrate a novel interface-type switching strategy to realize ferroelectric characteristics in atomic-scale amorphous binary oxide films, which are formed in oxygen-deficient conditions by atomic layer deposition at low temperatures. This approach can avoid the shortcomings of reliability degradation and gate leakage increment in scaling polycrystalline doped HfO2-based films. Using theoretical modeling and experimental characterization, we show the following. (1) Emerging ferroelectricity exists in ultrathin oxide systems as a result of microscopic ion migration during the switching process. (2) These ferroelectric binary oxide films are governed by an interface-limited switching mechanism, which can be attributed to oxygen vacancy migration and surface defects related to electron (de)trapping. (3) Transistors featuring ultrathin amorphous dielectrics, used for non-volatile memory applications with an operating voltage reduced to ±1 V, have also been experimentally demonstrated. These findings suggest that this strategy is a promising approach to realizing next-generation complementary metal-oxide semiconductors with scalable ferroelectric materials.

     

/

返回文章
返回