Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing
doi: 10.1088/2752-5724/ac3568
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Abstract: Perovskite quantum dots (PeQDs) are considered potential display materials due to their high color purity, high photoluminescence quantum yield (PLQY), low cost and easy film casting. In this work, a novel electroluminescence (EL) device consisting of the interface layer of long alkyl-based oleylammonium bromide (OAmBr), which passivates the surface defects of PeQDs and adjusts the carrier transport properties, was designed. The PLQY of the OAmBr/PeQD bilayer was significantly improved. A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2,2-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method. A peak external quantum efficiency (EQE) of 16.5% at the emission wavelength of 646 nm was obtained. Furthermore, an efficient matrix EL device was fabricated using an inkjet printing method. A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing process. The EQE reached 9.6% for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.
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Key words:
- perovskite quantum dot /
- light-emitting diode /
- inkjet print
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Figure 1. (a) Absorption and PL spectra of PeQDs deposited on a quartz plate. (b) TEM image of PeQD. Inset: size distribution of PeQDs. (c) XRD pattern of PeQDs with and without OAmBr film deposited on a glass substrate. (d) PL decay curves of PeQD film with and without OAmBr. Inset: photo of PeQD film with (right) and without OAmBr (left) under UV light.
Figure 2. (a) AFM image of PeQD film without OAmBr. (b) AFM image of PeQD film with OAmBr. (c) SEM image of PeQD film without OAmBr. (d) SEM image of PeQD film with OAmBr.
Figure 3. (a)-(c), XPS spectra of PeQD films with and without OAmBr. (a) Br 3d spectra. (b) I 3d spectra. (c) N 1s spectra. (d) Absorption and PL spectra of PeQDs with and without OAmBr. (e) J-V curve of the hole-only device with and without OAmBr layer. (f) J-V curve of the electron-only device with and without OAmBr layer.
Figure 4. (a) Device structure of PeQD-LED. (b) J-V-L characteristics, (c) LE-J characteristics, (d) EQE-J characteristics and (e) EQE-L characteristics of PeQD-LEDs with and without OAmBr, OAmBr:PeQDs. (f) EL spectra of the PeQD-LED with OAmBr.
Figure 5. (a) Drying process of one droplet of PeQDs with and without PB in air over time. (b) J-V-L characteristic, and (c) LE-J characteristic of inkjet printing PeQD-LED with and without PB. (d) PL image of inkjet-printed matrix PeQD-LED. (e) Light-on image of inkjet-printed matrix PeQD-LED with a bias of 4 V (scale bar: 200
m). Table 1. The elemental ratios of Sr, Zn and Pb in PeQDs.
Ratio Pb Sr Zn Sr:Zn = 2:8 99.45% 0.20% 0.35% Sr:Zn = 4:6 99.10% 0.33% 0.57% Sr:Zn = 6:4 99.24% 0.30% 0.46% Sr:Zn = 8:2 98.74% 0.30% 0.96% 
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