Si nanoparticles seeded in carbon-coated Sn nanowires as an anode for high-energy and high-rate lithium-ion batteries

doi: 10.1088/2752-5724/ac3257

Liubin Ben^{1, 2, 3, 4},
Jin Zhou^{1, 2, 3, 4},
Hongxiang Ji^{1, 2, 3},
Hailong Yu^{1, 2, 3},
Wenwu Zhao^{1, 2, 3},
Xuejie Huang^{1, 2, 3
,}

1.
Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong Province, People’s Republic of China
2.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
3.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

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Corresponding author: E-mail: xjhuang@iphy.ac.cn

摘要

Abstract: High-capacity and high-rate anode materials are desperately desired for applications in the next generation lithium-ion batteries. Here, we report preparation of an anode showing a structure of Si nanoparticles wrapped inside Sn nanowires. This anode inherits the advantages of both Si and Sn, endowing lithiation/delithiation of Si nanoparticles inside the conducting networks of Sn nanowires. It demonstrates a high and reversible capacity of 1500 mAh g^-1 over 300 cycles at 0.2 C and a good rate capability (0.2 C-5 C) equivalent to Sn. The excellent cycling performance is attributed to the novel structure of the anode as well as the strong mechanical strength of the nanowires which is directly confirmed by in-situ lithiation and bending experiments.
- anode /
- Si /
- Sn /
- nanowire /
- electrochemical cycling
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Figure 1. A typical SEM image of (a₁) Si and (a₂) SnO₂ NPs and (a₃), (a₄) SiNPs-in-SnNWs anode. (b₁), (b₂) STEM-BF images of SiNPs-in-SnNWs with the green bean shaped NWs and associated EDS mapping of (b₃) C, (b₄) Sn, and (b₅) Si. (c) Schematic showing the formation of Si NPs seeded in Sn NWs with green bean shaped NWs and Sn NWs with straight shaped NWs. (d₁) and (d₂) STEM-BF images of SnNWs with straight shaped NWs.

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Figure 2. (a₁) A low-magnification STEM-HAADF image of a part of NW of the SiNPs-in-SnNWs anode and (a₂) corresponding EELS mapping of elemental carbon. (b₁) and (b₂) Enlarged surface regions of panel a₁. (c₁) and (c₂) Enlarged centre regions of panel a₁. FFTs corresponding to the surface (I4₁/amd) and center (Fd-3m) regions are inlaid in panels b₂ and c₂, respectively. The detailed index of FFTs is shown in supporting information figure S7.

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Figure 3. Electrochemical performance of SiNPs, SnNWs, and SiNPs-in-SnNWs half-cells. Charge-discharge curves (at 0.2 C) in the 1st and 2nd cycles for (a₁)-(a₃) SiNPs, SnNWs, and SiNPs-in-SnNWs half-cells. Capacity retention and coulombic efficiency over 300 cycles (at 0.2 C) at room temperature for (b₁)-(b₃) SiNPs, SnNWs, and SiNPs-in-SnNWs half-cells, respectively. Rate capability (0.2 C-5 C) for (c₁)-(c₃) SiNPs, SnNWs half-cells and SiNPs-in-SnNWs, respectively.

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Figure 4. The first and second dQ/dV curves for (a₁) SiNPs, (a₂) SnNWs and (a₃) SiNPs-in-SnNWs. dQ/dV curves of the SiNP-in-SnNWs half-cell during (b₁) 2nd charge and (b₂) 3rd-20th charge cycles. -dQ/dV curves of the SiNP-in-SnNWs half-cell during (c₁) 2nd discharge and (c₂) 3rd-20th discharge cycles.

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Figure 5. (a₁) In-situ XRD scans (140 scans for the first discharging cycle, 112 scans for the first charging cycle and 130 scans for the second discharging cycle) collected, (a₂) an isoplot converted from the collected XRD scans. Charge-discharge curves in the first-charge, first discharge and second charge cycle for the in-situ XRD experiment is also shown. The maximum peak intensity extracted from the in-situ XRD patterns for the (b₁) Sn (002), (b₂) Li₂Sn₅ (001), (b₃) LiSn (010), (b₄) Li₂₂Sn₅ (066) and (c) Si (111) peaks. Charge discharge curves in the first cycle are shown in (d). The dashed line across panels d indicates the start of the decrease in the Si (111) peak intensity. The unit a.u. in the panel is the abbreviation of arbitrary unit.

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Figure 6. (a₁) and (a₂) A SEM image of the SiNPs-in-SnNWs anode after the 100th cycle. (c₁)-(c₃) a series of low-magnification STEM images of a continuous lithiation process of a single NW of SiNPs-in-SnNWs anode material. The total lithiation time is 15 s. (d₁) and (d₂) a series of low-magnification STEM images of a continuous bending and recovery process of a single NW of SiNPs-in-SnNWs anode after lithiation. The bending time is 4 s and the recovery time is 3 s. (d₃) schematic shows the calculation of the bending strain.

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