Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of the emerging ferroelectricity in binary oxides[J]. Materials Futures. doi: 10.1088/2752-5724/ad3bd5
Citation:
Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of the emerging ferroelectricity in binary oxides[J]. Materials Futures. doi: 10.1088/2752-5724/ad3bd5
Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of the emerging ferroelectricity in binary oxides[J]. Materials Futures. doi: 10.1088/2752-5724/ad3bd5
Citation:
Huan Liu, Fei Yu, Bing Chen, Zheng-Dong Luo, Jiajia Chen, Yong Zhang, Ze Feng, Hong Dong, Xiao Yu, Yan Liu, Genquan Han, Yue Hao. Evidence for reversible oxygen ion movement during electrical pulsing: enabler of the emerging ferroelectricity in binary oxides[J]. Materials Futures. doi: 10.1088/2752-5724/ad3bd5
1 State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, P. R. China
2 Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou 311121, China
3 Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Nankai University, Tianjin 300350, China
Co-first authors: Huan Liu, Fei Yu
Funds:
The authors acknowledge support from the National Key R&D Program of China (No. 2022ZD0119002), the National Natural Science Foundation of China (Grant No. 62204226, 62025402, 62090033, 92364204, 92264202 and 62293522) and Major Program of Zhejiang Natural Science Foundation (Grant No. LDT23F04024F04).
The performance of red InP and blue ZnTeSe-based quantum dots (QDs) and corresponding QD light emitting diodes (QLEDs) has already been improved significantly, whose external quantum efficiencies (EQEs) and luminances have exceeded 20% and 80,000 cd m-2, respectively. However, the inferior performance of the green InP-based device hinders the commercialization of full-color Cd-free QLED technology. The ease of oxidation of the highly reactive InP cores leads to high non-radiative recombination and poor photoluminescence quantum yield (PL QY) of the InP-based core/shell quantum dots (QDs), limiting the performance of the relevant QLEDs. Here, we proposed a fluoride-free synthesis strategy to in-situ passivate the InP cores, in which zinc myristate reacted with phosphine dangling bonds to form Zn-P protective layer and protect InP cores from the water and oxygen in the environment. The resultant InP/ZnSe/ZnS core/shell QDs demonstrated a high PL QY of 91%. The corresponding green-emitting electroluminescence devices exhibited a maximum EQE of 12.74%, along with a luminance of over 175,000 cd m-2 and a long T50@100 cd m-2 lifetime of over 20,000 h.